features low cost diffused junction low leakage low forward voltage drop mechanical data terminals: axial lead ,solderable per mil- std-750,method 2026 polarity: color band denotes cathode weight: 0.041 ounces,1.15grams mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. e g p 3 0 c e g p 3 0 d u n i t s maximum recurrent peak reverse voltage v r r m v max imum rms v oltage v r m s v maximum dc blocking voltage v dc v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half-sine-w ave s u pe r i m po s ed on r ated l oad maximum instantaneous forw ard voltage @ 3 .0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =125 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf r ja r jl operating junction temperature range t j storage temperature range t stg v o l t a g e r a n g e : 5 0 --- 8 0 0 v current: 3.0 a 35 70 105 140 210 280 420 560 maximum ratings and electrical characteristics 3 . t her m al re s i s t an c e j un c t i on t o a m b i en t. i fsm i r note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. - 55 ---- + 150 a - 5 5 - --- + 1 5 0 do - 2 7 e gp30a (z) --- egp3 0k (z) 8 .5 e g p 3 0 b a high surge current capability h i g h e f f i c i e n c y r e c t i f i e r s easily cleaned with alcohol,isopropanol and similar solvents 3.0 50 100 150 200 300 400 600 800 the plastic material carries u/l recognition 94v-0 case:jedec do--27,molded plastic e g p 3 0 a 50 100 150 200 300 400 600 800 e g p 3 0 f 20 t y p i c al th e r m al r e s i s t an c e ( n o t e3) i f(av) a /w 125.0 0 . 95 1.25 1.7 5.0 100.0 e g p egp egp 3 0 g 30j 30k 95 75 50 75 /w typical thermal resistance (note4) 4.thermal resistance junction to lead. dimensions in millimeters www.diode.kr diode semiconductor korea
amperes amperes amperes fig.2 -- typical forward characteristic fig.3 -- forward derating curve z fig.4 -- typical junction capacitance fig.5 -- peak forward surge current ambient temperature, peak forward surge current number of cycles at 60hz reverse voltage,volts average forward current set time base for 20/30 ns/cm junction capacitance,pf notes:1.rise time = 7ns max.input impedance = 1m .22pf. jjjjj 2.rise time =10ns max.source impedance=50 . instantaneous forward voltage, volts instantaneous forward current fig . 1 -- test circuit diagram and reverse recovery time characteristic EGP30A (z) ---egp3 0k (z) t j =25 pulse width=300 0 1 . 0 2 . 0 3 . 0 0 25 50 75 100 125 150 single phase half wave 60hz resistive or inductive load 0 1 10 1 0 0 t j =125 . 3ms single half sine-wave 25 50 75 100 125 150 175 diode semiconductor korea www.diode.kr
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